MRF377HR3
13
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
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EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
2
Mar. 2009
?
Data sheet revised to reflect part status change, removing MRF377HR5. Refer to PCN13170.
(See Rev. 1 data sheet for MRF377HR5.)
?
Updated Part Numbers in Tables 5 and 6, Component Designations and Values, to RoHS compliant part
numbers, p. 4, 7
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Added Revision History, p. 13
LIFETIME BU
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相关代理商/技术参数
MRF377HR3_09
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF377HR5
功能描述:射频MOSFET电源晶体管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF377R3
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR
MRF377R5
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR
MRF3866
功能描述:射频双极小信号晶体管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel
MRF3866G
制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF3866R1
制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT
MRF3866R2
制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS